Laminated semiconductor ceramic capacitor with a grain boundary-

Details Laminated semiconductor ceramic capacitor with a grain boundary- Laminated semiconductor ceramic capacitor with a grain boundary-

1991-12-20

1992-11-24

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 252520, 264 61, H01G 410, H01G 700, C04B 3332, H01B 106

Patent

active

051668599

ABSTRACT:
A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary-insulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.

REFERENCES:
patent: 4290041 (1981-09-01), Utsumi et al.
patent: 4519942 (1985-05-01), Yamaoka et al.
patent: 4541974 (1985-09-01), Yamaoka et al.
patent: 4607018 (1986-08-01), Nishioka et al.
patent: 4799127 (1989-01-01), Ono et al.

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