Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling
Reexamination Certificate
2005-12-27
2005-12-27
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With desiccant, getter, or gas filling
C257S703000, C174S255000, C174S256000, C361S758000, C361S792000, C361S795000, C422S186000
Reexamination Certificate
active
06979892
ABSTRACT:
A method for preparing a non-thermal plasma reactor substrate includes disposing electrical vias on green stage first and second ceramic plates; filling the electrical vias with conductive material; and forming electrical contact via cover pads; disposing conductive material on the first ceramic plate to form an electrode plate having a main electrode portion and a terminal lead for electrically connecting the main electrode portion to the electrical vias; laminating the electrode plate and the second ceramic plate together, embedding the electrode therebetween; co-firing the plates to form a laminated co-fired embedded-conductor element; stacking a plurality of the laminated co-fired embedded-conductor elements to form a multi-cell stack, the filled electrical vias aligning in the stack to provide an electrical bus for connecting alternating elements in the stack; and disposing spacers with matching vias and via cover pads between adjacent pairs of elements to form exhaust gas passages.
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Chen David Kwo-Shyong
Kupe Joachim
Li Bob Xiaobin
Nelson David Emil
Chambliss Alonzo
Delphi Technologies Inc.
Marshall Paul L.
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