Laminate structure and its manufacturing method, including...

Details Laminate structure and its manufacturing method, including... Laminate structure and its manufacturing method, including...

2008-03-05

2011-11-01

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S779000, C347S041000

Reexamination Certificate

active

08049211

ABSTRACT:
A disclosed laminate structure is capable of having its surface free energy changed with a small amount of UV irradiation. The invention also discloses a method of manufacturing the laminate structure; an electronic device having the laminate structure; an electronic device array having a plurality of the electronic devices; and a display apparatus having the electronic device array. The laminate structure includes a substrate11, a wettability variable layer12disposed on the substrate, and a conducting layer13patterned on the wettability variable layer12. The wettability variable layer12includes a material whose critical surface tension varies upon application of energy. The material with variable critical surface tension has a main chain and a side chain. The side chain has two or more sites of which the bond is cleaved upon absorption of energy.

REFERENCES:
patent: 2003/0068581 (2003-04-01), Kawamura et al.
patent: 2003-76004 (2003-03-01), None
patent: 2005-39086 (2005-02-01), None
patent: 2005-310962 (2005-11-01), None
patent: 2006-60113 (2006-03-01), None
patent: 2006060113 (2006-03-01), None
patent: 2008-41951 (2008-02-01), None
English Translation of JP 2006060113 A, generated Feb. 26, 2011.
Wada, Takatsugu, et al., “IJ formation of Organic TFT's narrow channel, using UV patterned Alignment Thin Film”, 31P-yy-5, Canon, Inc., Research Laboratory of Printing Technologies (2005).
Feb. 28, 2011 Korean official action (with English translation) in connection with a counterpart Korean patent application.

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