Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-06-13
1997-12-30
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 77, 313306, 313351, H01L 2906, H01J 146
Patent
active
057033803
ABSTRACT:
A lateral-emitter electron field emission device structure incorporates a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates when etched by an etchant. In its simplest form, the laminar composite emitter consists of two ultra-thin layers, etched differentially so that a salient remaining portion of the more etch-resistant layer protrudes beyond the less etch-resistant layer to form a small-radius tip. In a preferred form of the laminar composite emitter, it is a multi-layer laminar emitter, of which the most etch-resistant layer is doped-diamond. The diamond layer is doped using one or more N-type dopants. In this preferred emitter structure, the edge of the thin film diamond layer is the dominant electron emitter with a very low (nearly zero) work function. Hence the new device can operate at applied voltages substantially lower than in prior art. The laminar structure may be a sandwich structure with three layers. Upper and/or lower supporting metallic layers act as both physical supporting material and as an integral electrical conducting medium. This allows the diamond layer to be very thin, on the order of tens of angstroms (i.e. less than 100 angstroms). The laminar composite emitter is specially adapted to fabrication by a method using semiconductor integrated circuit fabrication processes.
REFERENCES:
patent: 3699404 (1972-10-01), Simon et al.
patent: 3806372 (1974-04-01), Sommer
patent: 4164680 (1979-08-01), Villalobos
patent: 4307507 (1981-12-01), Gray et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4728851 (1988-03-01), Lambe
patent: 4827177 (1989-05-01), Lee et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 5089292 (1992-02-01), McCaulay et al.
patent: 5129850 (1992-07-01), Kane et al.
patent: 5138237 (1992-08-01), Kane et al.
patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5144191 (1992-09-01), Jones et al.
patent: 5170100 (1992-12-01), Shichao et al.
patent: 5180951 (1993-01-01), Dworsky et al.
patent: 5199918 (1993-04-01), Kumar
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5202571 (1993-04-01), Hirabayashi
patent: 5214347 (1993-05-01), Gray
patent: 5233263 (1993-08-01), Cronin et al.
patent: 5252833 (1993-10-01), Kane et al.
patent: 5256888 (1993-10-01), Kane
patent: 5258685 (1993-11-01), Jaskie et al.
patent: 5266155 (1993-11-01), Gray
patent: 5278475 (1994-01-01), Jaskie et al.
patent: 5280221 (1994-01-01), Okamoto et al.
patent: 5283501 (1994-02-01), Zhu et al.
patent: 5289086 (1994-02-01), Kane
patent: 5290610 (1994-03-01), Kane et al.
patent: 5308439 (1994-05-01), Cronin et al.
patent: 5315126 (1994-05-01), Field
patent: 5334908 (1994-08-01), Zimmerman
patent: 5341063 (1994-08-01), Kumar
patent: 5349265 (1994-09-01), Lemelson
patent: 5354694 (1994-10-01), Field et al.
patent: 5386172 (1995-01-01), Komatsu
patent: 5397957 (1995-03-01), Zimmerman
patent: 5409568 (1995-04-01), Vasche
patent: 5548185 (1996-08-01), Kumar et al.
patent: 5552613 (1996-09-01), Mishibayashi et al.
Geis et al. "Diamond Cold Cathode" IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 456-459.
Djubua et al. "Emission Properties of Spindt-Type Cold Cathodes with Different Emission Cone Material" IEEE Trans. Electron Devices, vol. 38, No. 10, Oct. 1991, pp. 2314-2316.
Advanced Vision Technologies Inc.
Prenty Mark V.
Touw Theodore R.
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