Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1996-05-08
1998-06-30
Breneman, R. Bruce
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216108, G23F 100
Patent
active
057729077
ABSTRACT:
The use of lactic acid or its derivative in compositions to etch or polish materials containing indium phosphide results in treated surfaces that have reduced surface roughness compared to the surfaces treated with compositions devoid of lactic acid or its derivative. Indium phosphide surfaces treated with compositions containing lactic acid can have treated surfaces that are smooth or mirror-like, meaning that surface irregularities thereon are less than about 50 .ANG..
REFERENCES:
patent: 4428795 (1984-01-01), Kohl et al.
patent: 4686001 (1987-08-01), Okazaki
K. Ikossi-Anastasiou, "Wet Chemical Etching with Lactic Acid Solutions for nP-Based Semiconductor Devices", pp. 3558-3584 J. Electrochem. Soc. vol. 142, #10, Oct. 1995.
Binari Steve C.
Boos J. Brad
Ikossi-Anastasiou Kiki
Kelner Galina
Alanko Anita
Breneman R. Bruce
Kap George
McDonnell Thomas E.
The United States of America as represented by the Secretary of
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