Radiant energy – Radiant energy generation and sources
Patent
1998-04-03
2000-01-25
Nguyen, Kiet T.
Radiant energy
Radiant energy generation and sources
2504941, 2504951, 250504R, H05B 310
Patent
active
06018163&
ABSTRACT:
The present invention provides a missile seeker simulator (10) including a means for supplying a hot, point-like target against a given temperature background. The missile seeker simulator (10) includes a background source consisting of a hot cavity blackbody (56), fiber optic cable (64), silicon wafer (68), and controllable temperature source (76). The hot cavity blackbody target source (56) generates infrared radiation (58) in a wide bandpass. The fiber optic cable (64) receives and transmits the radiation (58) from the hot cavity blackbody (56). The silicon wafer (68) is remotely located from the hot cavity blackbody (56) and is positioned such that a pinhole (72) in the silicon wafer (68) is proximate a radiation emitting end (74) of the fiber optic cable (64). The silicon wafer (68) is also positioned in radiation receiving relation to the controllable temperature source (76). Collimating optics (80) receive the radiation (78, 58) from the controllable temperature source (76) and the fiber optic cable (64) via the silicon wafer (68) and pinhole (72) and presents it to the missile seeker (28). The fiber optic cable (64) facilitates remotely locating the hot cavity blackbody target source (56) from silicon wafer (68) to prevent any localized heating of the area presented as the background. The silicon wafer (68) provides the high spatial uniformity necessary for critical performance tests and the high temporal stability required for critical optical characterization tests. Optionally, the end (74) of the fiber optic cable (64) may be positioned at the focus of the collimating optics (80) while the silicon wafer (68) is positioned out-of-focus to yield a uniform background and a sharp point-like target appearing to originate at infinity. Advantageously, the silicon wafer (68) may consist of a low-cost "off-the-shelf" super-polished silicon wafer typical of those currently in wide use in the semiconductor industry.
REFERENCES:
patent: 5479025 (1995-12-01), Huniu et al.
Sapp Terry A.
Stephens Clark A.
Wolske Jeff S.
Lenzen, Jr. Glenn H.
Nguyen Kiet T.
Rudd Andrew J.
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