KTP solid solution single crystals and process for the productio

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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117 33, 117 36, 117941, C30B 2914, C30B 1504

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active

057887640

ABSTRACT:
Disclosed are a process for the production of solid solution single crystals of KTiOPO.sub.4 wherein a part or all of at least one of the elements, K, Ti and P is substituted with one or more other elements, which comprises moving a grown part(s) of crystal(s) to outside of a melt for the crystal growth while maintaining contact of a growing part(s) of the crystal(s) with said melt to obtain the above solid solution single crystals, wherein the moving is carried out while maintaining the temperature of the melt substantially constant and maintaining said melt at a substantially constant composition at which the solid solution single crystal(s) with the desired composition is precipitated at the above maintained temperature and a solid solution single crystal of KTiOPO4 wherein a part or all of at least one of the elements, K, Ti and P is substituted with one or more other elements and its composition is substantially homogeneous within its cubic portions of a side length of 1 cm.

REFERENCES:
patent: 5146533 (1992-09-01), Bierlien et al.
patent: 5334365 (1994-08-01), Cheng
patent: 5370076 (1994-12-01), Okamoto et al.
P.A. Morris et al., Journal of Crystal Growth 109, "Reduction of the ionic conductivity of flux growth KTiOPO.sub.4 crystals",1991, pp. 367-375.
G.M. Loiacono et al., Appl. Phys. Lett. 64(1). "Modified KTiOPO .sub.4 crystals for noncritical phase matching applications", 1994, pp.16-17.
L.T. Cheng et al., Appl. Phys. Lett. 64(2), "Blue light generation using bulk single crystals of niobium-doped KTiOPO .sub.4 ", 1994, pp. 155-157.

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