Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1997-10-24
2000-02-01
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257732, 257723, 257724, H01L 2348, H01L 23492
Patent
active
060206365
ABSTRACT:
A high-power high-voltage transistor has four or more semiconductor dies mounted in thermal contact on a metal flange. Each die has a flat lower surface with a drain (collector) region formed over at least 80 percent of its lower surface. A gate (base) region and a source (emitter) region are formed respectively on upper surfaces of the die. The drain region is seated in direct electrical and thermal contact with the flange, so that the flange serves as a drain lead for the transistor die. The die has a drain-source breakdown voltage or collector-emitter breakdown voltage) on the order of one kilovolt or higher and an area of one hundred thousand square mils or larger. Molybdenum tabs between the drain (collector) region and the flange protect the die from thermally-induced stresses. The dies can be MOSFET power transistors, bipolar junction transistors or other solid-state devices. An oval lead frame can be employed for connecting to the source regions. A carousel arrangement carries an array of chips on a circular flange. The transistor can be implemented as a DC grounded drain, RF common source amplifier circuit. The gate-source input can float, allowing the drain to be DC and thermally grounded. The RF current path is conventional common source (emitter).
REFERENCES:
patent: 4788584 (1988-11-01), Hirano et al.
patent: 5309014 (1994-05-01), Wilson
patent: 5503286 (1996-04-01), Nye, III et al.
patent: 5744861 (1998-04-01), Bayerer
ENI Technologies Inc.
Guay John
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