Junction vertical field effect transistor and process for the pr

Details Junction vertical field effect transistor and process for the pr Junction vertical field effect transistor and process for the pr

1982-06-10

1985-03-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148 15, 357 22, 357 55, 357 59, 156654, 156657, H01L 2906

Patent

active

045050228

ABSTRACT:
This transistor comprises a first main surface of alternating source and gate strips. A gate metallization rests on the gate strips and a source metallization rests on a polycrystalline silicon rail formed above the source strips. Such a device can be manufactured by entirely self-aligned methods and is applicable particularly to the very high frequency range up to a few dozen gigahertz.

REFERENCES:
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 4070690 (1978-01-01), Wickstrom
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4262296 (1981-04-01), Sheely et al.
patent: 4337115 (1982-06-01), Ikeda et al.
IEEE Transactions On Electron Devices, vol. ED-25, No. 3, Mar. 1978, New York, J. I. Nishizawa et al.: "High-Frequency High-Power Static Induction Transistor", pp. 314-322.
IEEE International Electron Devices Meeting, Technical Digest, Dec. 4-6, 1978, Washington (New York), J. Nishizawa et al.: "Bipolar Mode Static Induction Transistor (BSIT)-High Speed Switching Device," pp. 676-679.
IEEE Transactions On Electron Devices, vol. ED-25, No. 1, Jan. 1978 (New York), Oamu Ozawa et al.: "A Vertical FET with Self-Aligned Ion-Implanted Source and Gate Regions", pp. 56-57.
IEEE Transactions On Electron Devices, vol. ED-26, No. 4, Apr., 1979 (New York), T. Sakai et al.: "Elevated Electrode Integrated Circuits", pp. 379-385.
Solid State Electronics, vol. 21, No. 9, Sep. 1978, Pergamon Press Ltd., B. A. Boxall: "A Technique For Producing Polysilicon Patterns With Bevelled Edge Profiles Using Wet Etching", pp. 1173-1174.

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