Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device
Reexamination Certificate
2005-04-19
2005-04-19
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
C257S312000, C257S596000, C257S597000, C257S598000, C257S599000, C257S600000
Reexamination Certificate
active
06882029
ABSTRACT:
A PN-junction varactor includes a first ion well of first conductivity type formed on a semiconductor substrate of second conductivity type. A first dummy gate is formed over the first ion well. A first gate dielectric layer is formed between the first dummy gate and the first ion well. A second dummy gate is formed over the first ion well at one side of the first dummy gate. A second gate dielectric layer is formed between the second dummy gate and the first ion well. A first heavily doped region of the second conductivity type is located in the first ion well between the first dummy gate and the second dummy gate. The first heavily doped region of the second conductivity type serving as an anode of the PN-junction varactor. Second heavily doped regions of the first conductivity type located in the first ion well at one side of the first dummy gate that is opposite to the first heavily doped region and at one side of the second dummy gate that is opposite to the first heavily doped region, the second heavily doped regions being electrically connected to each other and serving as a cathode of the PN junction varactor.
REFERENCES:
patent: 5198687 (1993-03-01), Baliga
patent: 6392277 (2002-05-01), Mitani et al.
patent: 6528849 (2003-03-01), Khemka et al.
patent: 6576958 (2003-06-01), Ker et al.
patent: 6608747 (2003-08-01), Ito
patent: 6630376 (2003-10-01), Krishnan et al.
patent: 6635518 (2003-10-01), Aipperspach et al.
patent: 6642607 (2003-11-01), Ohnishi et al.
patent: 6646305 (2003-11-01), Assaderaghi et al.
patent: 6700151 (2004-03-01), Peng
patent: 6764891 (2004-07-01), Altmann
patent: 20040026750 (2004-02-01), Takamura
patent: 20040082124 (2004-04-01), Coolbaugh et al.
Chen Anchor
Gau Jing-Horng
Fenty Jesse A.
Hsu Winston
Jackson Jerome
United Microelectronics Corp.
LandOfFree
Junction varactor with high Q factor and wide tuning range does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Junction varactor with high Q factor and wide tuning range, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Junction varactor with high Q factor and wide tuning range will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3417284