Patent
1985-09-30
1988-05-03
James, Andrew J.
357 56, 357 16, 357 4, H01L 3300
Patent
active
047423781
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to semiconductor light emitting devices which are usable as light emitting diodes and laser diodes, and more particularly to a junction-type semiconductor light emitting device whose pn junction is formed perpendicular to a substrate or like plate portion to provide an active region for emitting light in the vertical direction.
BACKGROUND TECHNIQUE
Light emitting devices which radiate light perpendicular to the substrate can be easily coupled to optical fibers and are expected to find various uses as surface emitting light sources. Efforts have therefore been made to develop these devices in the field of research on laser diodes and light emitting diodes, and a wide variety of such devices are in use in recent years.
With the conventional perpendicular radiationtype or surface emitting-type light source device, however, the pn junction is positioned in parallel with the substrate to provide an active region which is usually as small as 2 to 3 .mu.m in thickness. Consequently, a gain which is needed for causing the device of this type to produce laser oscillation of sufficient intensity perpendicular to the substrate. Thus, the device substantially has the fatal drawback that it is difficult to realize continuous oscillation at room temperature as essentially required of useful laser diodes.
Generally speaking, in the field of various systems such as those of optical communication and optical information transference or various optical industrial techniques for manufacturing optical diodes, optical memories and the like, the research and the development of various kinds of semiconductor laser devices, photodiodes and the like as for the source for generating the light regarded as the subject thereof are actively performed. However, in the most of highly efficient semiconductor laser devices which have been conventionally developed, the confinement of carriers and lights is effectively carried out by employing a wafer having double hetetostructure, so that the resultant lights are emitted in the direction parallel with the substrate of the device, as well as the injection of the carriers is effected in the direction of thickness thereof.
On the other hand, the so-called "facial light emitting" device constructed such as the resultant light is emitted in the direction of thickness perpendicular to the device substrate is widely used in the from of light emitting diode. The light emitting device of this kind has been developed as regarded as a light emitting diode having a wide light emitting surface, meanwhile the possibility of realization of a facial light emitting device provided with the function of semiconductor laser.
The conventional facial light emitting device of this kind, particularly, the conventional facial light emitting semiconductor laser device is constructed as shown in FIG. 1, that is, as operated as a laser device by basically forming an optical resonator in a manner such as clad layers and a reflector layer are provided on an upper and a lower surfaces of an active region of a facial light emitting type light emitting diode, the latter being sandwiched by the formers.
Concretely speaking, in the crosssectional view of the structure as shown in FIG. 1, an intermediate layer 1 having thickness d is sandwiched by clad layers 2 and 3 consisting of a material having a wide energy gap, so as to form a sandwich structure. Among the clad layers 2 and 3 in this exemplified structure, the thicker clad layer 2 as shown in FIG. 1 is formed as of n-type, meanwhile the other clad layer 3 is formed as of p-type. On an upper surface and a lower surface of this sandwich structure, an annular electrode 8 and a circular electrode 6 are provided, respectively, as shown in FIG. 1, so as to form an active region 4 in the central portion of the intermediate layer 1 usually consisting of an intrinsic material and excited by making a current CF flow therethrough in a bell-bottom shape, this active region 4 only being injected with the carriers from the upper and t
REFERENCES:
patent: 4503540 (1985-03-01), Nakashima et al.
patent: 4611222 (1986-09-01), Page
Official Communication, ECOC '84, Tenth Europea Conference on Optical Communication, 3rd-6th Sep. 1984, Stuttgart, pp. 56-57.
Japanese Journal of Applied Physics, vol. 18, No. 12, 1979.
Japanese Journal of Applied Physics, vol. 20, No. 8, Aug. 1981. pp. L563-L566.
Patents Abstracts of Japan, vol. 6, No. 176 (E-130) [1054], 10th Sep. 1982; & JP-A 57 91 574 (Nippon Denki K.K.) 07-06-82.
Inaba Humio
Ito Hiromasa
James Andrew J.
Japan Represented by President of Tohoku University
Mintel William A.
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