Junction type field effect transistor with source at oxide-gate

Details Junction type field effect transistor with source at oxide-gate Junction type field effect transistor with source at oxide-gate

1978-08-28

1981-08-18

Clawson, Jr., Joseph E.

357 20, H01L 2980

Patent

active

042849985

ABSTRACT:
A junction type field effect transistor comprises a semiconductor layer of one conductivity type acting as a drain region, a source region of said one conductivity type formed to a prescribed depth from the surface of the semiconductor layer, an insulation layer formed to a prescribed depth from the surface of the semiconductor layer to surround the source region, and a gate region of the opposite conductivity type formed in the proximity of the sorce region. The insulation layer and source region are formed to substantially the same depth.

REFERENCES:
patent: 3414782 (1968-12-01), Lin et al.
patent: 3497777 (1970-02-01), Teszner
patent: 3814995 (1974-06-01), Teszner
patent: 3977017 (1976-08-01), Ishitani
patent: 3982264 (1976-09-01), Ishitani

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