Junction type field effect transistor with metallized oxide film

Details Junction type field effect transistor with metallized oxide film Junction type field effect transistor with metallized oxide film

1985-09-12

1989-01-31

James, Andrew J.

357 15, 357 2312, H01L 2980

Patent

active

048019879

ABSTRACT:
A gallium arsenide field effect transistor having a gate electrode of an alloy type p-n junction comprises source and drain electrodes formed on an n-type gallium arsenide region, a gate electrode of metal such as zinc or cadmium or an alloy of zinc or cadmium and gold, silver, tin or indium formed between the source and drain electrodes on the gallium arsenide region and serving as an impurity to the n-type gallium arsenide region, a p-type region being formed immediately beneath the gate electrode in the n-type gallium arsenide region. The above described field effect transistor is manufactured by the steps of: forming a source and drain electrodes on the n-type gallium arsenide region, depositing the gate electrode of the said metal or alloy, and heating the gallium arsenide region at the temperature lower than the melting point of the metal or the alloy, thereby to form the p-type region immediately beneath the gate electrode.

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