Junction-type field-effect transistor with improved impact-ioniz

Details Junction-type field-effect transistor with improved impact-ioniz Junction-type field-effect transistor with improved impact-ioniz

1998-01-27

2000-02-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257285, H01L 2980, H01L 31112

Patent

active

06020608&

ABSTRACT:
Junction-type field-effect transistors are disclosed exhibiting improved resistance to impact ionization. A p-type gate region is formed above an n-type channel region between an n-type drain region and an n-type source region each having a high impurity concentration. The impurity concentration in the vicinity of a point on a boundary between the channel region and the drain region is higher than the impurity concentration in the vicinity of a point on a boundary between the channel region and the source region. The impurity concentration in the channel region can increase essentially linearly or stepwise from the source region to the drain region. The pinch-off point is shifted toward the source side, and the electric field intensity in the boundary region between the channel region and the drain region is relatively low to inhibit impact ionization.

REFERENCES:
patent: Re34821 (1995-01-01), Khadder et al.
patent: 5324969 (1994-06-01), Murai et al.
patent: 5376812 (1994-12-01), Oku

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