Junction-type field-effect transistor and its manufacture

Details Junction-type field-effect transistor and its manufacture Junction-type field-effect transistor and its manufacture

1983-10-11

1984-11-20

Edlow, Martin H.

357 13, 357 20, H01L 2980, H01L 2906, H01L 2990

Patent

active

044842082

ABSTRACT:
The channel region and gate region of a junction-type field-effect transistor have substantially the same outline and can be produced by successive implantation through the same mask. A highly doped contact zone ensures an ohmic connection between this gate region and the other portion of the gate formed by the part of the layer situated below the channel region. Such a transistor may have a low threshold voltage while being comparatively easy to manufacture, for example, in an integrated circuit with bipolar transistors. The contact zone may be formed simultaneously with a bipolar transistor emitter zone.

REFERENCES:
patent: 3725136 (1973-04-01), Morgan
patent: 4053915 (1977-10-01), Cave
patent: 4066917 (1978-01-01), Compton et al.
patent: 4143386 (1979-03-01), Kaiser
patent: 4176368 (1979-11-01), Compton
patent: 4314267 (1982-02-01), Bergeron et al.

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