Junction type field effect transistor

Details Junction type field effect transistor Junction type field effect transistor

1977-11-04

1980-02-05

Wojciechowicz, Edward J.

357 55, 357 59, 357 68, 357 71, H01L 2980

Patent

active

041875141

ABSTRACT:
A junction type field effect transistor comprising a semiconductor substrate; semiconductor regions formed in the semiconductor substrate and exposed on a major surface thereof, the semiconductor regions including a gate region and an isolation region; and a polycrystalline semiconductor layer formed on the surface of the gate region or on the surfaces of the gate region and the isolation region. The polycrystalline semiconductor layer contains an impurity of the same conductivity type as the gate and the isolation regions.

REFERENCES:
patent: 3977017 (1976-08-01), Ishitani
patent: 3978515 (1976-08-01), Evans et al.

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