Junction type field-effect transistor

Details Junction type field-effect transistor Junction type field-effect transistor

1995-02-28

1997-08-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257192, H01L 310328, H01L 2980

Patent

active

056613180

ABSTRACT:
A junction type field-effect transistor in accordance with the invention includes a multi-layer structure which includes a first undoped semiconductor layer, a first first-conductive type semiconductor layer and a second undoped semiconductor layer. These layers are deposited and epitaxially grown in this order on a surface of a semiconductor substrate. A part of the first first-conductive type semiconductor layer is exposed outside in a surface of the multi-layer structure. A second-conductive semiconductor layer is joined to the multi-layer structure through the surface of said multi-layer structure. A drain electrode line and a source electrode line are kept in ohmic contact with the second-conductive type semiconductor layer, and are disposed at opposite sides of a location at which the first first-conductive type semiconductor layer is joined to the second-conductive type semiconductor layer. The invention makes it possible to form the first first-conductive type semiconductor layer thinner, and thereby achieve a gate length shorter than a minimum length achievable by lithography technique.

REFERENCES:
patent: 4893155 (1990-01-01), Ohata

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