Junction type field effect transistor

Details Junction type field effect transistor Junction type field effect transistor

1977-06-28

1979-03-06

Wojciechowicz, Edward J.

357 89, 357 90, H01L 2980

Patent

active

041433866

ABSTRACT:
A junction type field effect transistor comprises a source region and a drain region extending into a semiconductor body further than the channel region and a gate region located entirely within the channel region between the source and drain regions, leaving an exposed external surface. The invention also includes a method of making such a transistor.

REFERENCES:
patent: 4053915 (1977-10-01), Cave

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