Junction transistor with linearly graded impurity concentration

Details Junction transistor with linearly graded impurity concentration Junction transistor with linearly graded impurity concentration

1975-06-11

1976-06-15

James, Andrew J.

Metal treatment

Stock

Ferrous

357 35, 357 63, 357 89, 148175, H01L 2972, H01L 29167

Patent

active

039640892

ABSTRACT:
A junction transistor is provided which is especially adapted for use in an amplifier circuit in which third-order intermodulation distortion is especially low. To this end, an epitaxial junction transistor is made to have a substantially linearly graded concentration of the dominant impurity over at least half of the high resistivity portion of its collector zone.

REFERENCES:
patent: 3490962 (1970-01-01), Duffy et al.
patent: 3523046 (1970-08-01), Grochowski et al.
patent: 3585464 (1971-06-01), Castrucci
patent: 3595716 (1971-07-01), Kerr et al.
patent: 3600648 (1971-08-01), Longo
patent: 3638301 (1972-02-01), Matsuura
patent: 3657612 (1972-04-01), Wiedmann
patent: 3663320 (1972-05-01), Maruyama et al.

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