Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2006-09-20
2008-10-14
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S772000, C257S779000, C257S780000
Reexamination Certificate
active
07436073
ABSTRACT:
A junction structure, and a semiconductor device including the same, for a junction of a terminal pad and solder, including an underlying base on which said terminal pad is formed; a nickel layer disposed on the terminal pad; a palladium layer or a gold layer disposed on the nickel layer; the solder; and a zinc system material layer provided between the palladium layer or the gold layer and the solder. The terminal pad and the solder may be provided in a semiconductor device in which the terminal pad lies inside the semiconductor device, and the zinc system material layer is formed between the terminal pad and the solder. The terminal pad may be provided over a substrate, the solder may be provided in the semiconductor device, and the zinc system material layer is then formed between the terminal pad of the substrate and the solder of the semiconductor device.
REFERENCES:
patent: 6590287 (2003-07-01), Ohuchi
patent: 7075183 (2006-07-01), Soga et al.
Lewis Monica
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
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