Metal treatment – Stock – Ferrous
Patent
1978-10-12
1981-07-14
Larkins, William D.
Metal treatment
Stock
Ferrous
148175, 156647, 357 55, 357 60, 357 20, H01L 2704, H01L 21302, H01L 2120, H01L 2176
Patent
active
042789877
ABSTRACT:
A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching solution to form a dent, removing the oxide film and growing an epitaxial layer of a conductor type opposite to that of the substrate on the entire surface of the substrate, and masking the dent with an oxide film and etching the epitaxial layer with an anisotropic etching solution to flatten the surface of the epitaxial layer, and a method for making this semiconductor device.
REFERENCES:
patent: 3728166 (1973-04-01), Bardell, Jr. et al.
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3793712 (1974-02-01), Bean et al.
patent: 3986200 (1976-10-01), Allison
patent: 3998674 (1976-12-01), Cameron et al.
patent: 4000019 (1976-12-01), van den Brenkel
patent: 4056413 (1977-11-01), Yashimura
patent: 4089021 (1978-05-01), Sato et al.
patent: 4141765 (1979-02-01), Draminski et al.
Imaizumi Ichiro
Kimura Masatoshi
Uehara Keijiro
Hitachi , Ltd.
Larkins William D.
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