Junction high electron mobility transistor-heterojunction bipola

Details Junction high electron mobility transistor-heterojunction bipola Junction high electron mobility transistor-heterojunction bipola

1996-09-12

2000-03-28

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257194, 257197, 257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

060435194

ABSTRACT:
A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.

REFERENCES:
patent: 4821090 (1989-04-01), Yokoyama
patent: 5223449 (1993-06-01), Morris et al.
patent: 5293084 (1994-03-01), Itoh et al.
"Junction heterostructures for high performance electronics", by Shealy et al., Solid State Electronics, vol. 38, No. 9, pp. 1607-1610, Sep. 1, 1995.
"Integration of GalnP/GaAs heterojunction bipolar transistors and high electron mobility transistors", by Yang et al., IEEE Electron Device Letters, vol. 17, No. 7., pp. 363-365, Jul. 1, 1996.
Usagawa et al., "A New Two-Dimensional Electron Gas Base Transistor (2DEG-HBT)," IEDM, pp. 78-81, 1987.
Zampardi et al., "Circuit Demonstrations in a GaAs BiFET Technology," Solid-State Electronics, Solid-State Electronics, vol. 38, No. 9, pp. 1723-1726, 1995.
Streit et al., "Monolithic HEMT-HBT Integration by Selective MBE," IEEE Transactions on Electron Devices, Vo. 42, No. 4, pp. 618-623, Apr., 1995.

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