Junction field effect transistor with lateral gate voltage swing

Details Junction field effect transistor with lateral gate voltage swing Junction field effect transistor with lateral gate voltage swing

1991-09-30

1994-05-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257 77, 257272, 257280, 257282, H01L 2980, H01L 31112, H01L 310312

Patent

active

053090071

ABSTRACT:
A field effect transistor having a buried gate, and one or more gates disposed along the channel between the source and drain, which cooperate to cause the electric field within the channel along its length to be more uniform, and have a lower field maximum. The geometry and/or doping of the channel can be varied to selectively vary the channel resistivity along its length, which also makes the field more uniform. Because of the more uniform field, electrons are exposed to a higher field strength nearer the source, and are accelerated to higher velocities more quickly, reducing the response time and increasing the frequency range of the transistor. Because the peak field is reduced, the transistor can carry more power without reaching breakdown potential within the channel.

REFERENCES:
patent: 4800172 (1989-01-01), Okano et al.
patent: 4914743 (1990-04-01), Yoder et al.
patent: 4929986 (1990-05-01), Yoder
patent: 5012315 (1991-04-01), Shur
patent: 5079620 (1992-01-01), Shur
IEEE Transactions on Electron Devices, vol. 36, No. 6, Jun. 1989, "High-Tsconductance B-SiC Buried-Gate JFET's" by Kelner et al., pp. 1045-1049.
IEEE Electron Device Letters, vol. EDL-8, No. 9, Sep. 1987, "B-SiC MESFET's and Buried-Gate JFET's" by Kelner et al., pp. 428-430.

Affiliated with

Also associated with

Rating

Junction field effect transistor with lateral gate voltage swing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Junction field effect transistor with lateral gate voltage swing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Junction field effect transistor with lateral gate voltage swing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2116394