Junction field effect transistor, integrated circuit for...

Details Junction field effect transistor, integrated circuit for... Junction field effect transistor, integrated circuit for...

2011-07-19

2011-07-19

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S586000, C257SE29183

Reexamination Certificate

active

07982248

ABSTRACT:
A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors.

REFERENCES:
patent: 5477175 (1995-12-01), Tisinger et al.
patent: 2001-007121 (2001-01-01), None
patent: 2005-268319 (2005-09-01), None

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