Junction field-effect transistor formed in silicon carbide

Details Junction field-effect transistor formed in silicon carbide Junction field-effect transistor formed in silicon carbide

1991-06-14

1993-11-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257267, 257 76, 437100, H01L 2980, H01L 2701, H01L 2712, H01L 2120

Patent

active

052647137

ABSTRACT:
A junction field-effect transistor is disclosed that comprises a bulk single crystal silicon carbide substrate having respective first and second surfaces opposite one another, the substrate having a single polytype and having a concentration of suitable dopant atoms so as to make the substrate a first conductivity type. A first epitaxial layer of silicon carbide is formed on the first surface of the substrate, and having a concentration of suitable dopant atoms that give the first epitaxial layer the first conductivity type. A second epitaxial layer of silicon carbide is formed on the first epitaxial layer, the second epitaxial layer having a concentration of suitable dopant atoms to give the second epitaxial layer a second conductivity type opposite from the first conductivity type. A higher conductivity region of silicon carbide is formed on the second epitaxial layer, A trench is formed in the second epitaxial layer and higher conductivity region extending entirely through the higher conductivity region and partially into the second epitaxial layer toward the first surface of the substrate for defining a gate region in the second epitaxial layer between the trench and the first epitaxial layer. The trench divides the second epitaxial layer and higher conductivity region into respective first and second regions with the trench therebetween.

REFERENCES:
patent: 4611222 (1986-09-01), Page
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4875083 (1989-10-01), Palmour
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4916510 (1990-04-01), Sano et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 4983536 (1991-01-01), Balat et al.
patent: 4994413 (1991-02-01), Eshita
patent: 5061972 (1991-10-01), Edmond
patent: 5075746 (1991-12-01), Hayashi et al.
Kanaya et al, "Controlled Sublimation Growth of Single Crystalling 4H-SiC and 6H-SiC and Identification of Polytypes by X-Ray Diffraction", Appl. Phys. Lett, vol. 58, #1, 7 Jan. 1991, pp. 56-58.
G. Kelner, S. Binari, M. Shur, and J. Palmour; High Temperature Operation of .alpha.-Silicon Carbide Buried-Gate Junction Field Effect Transistors; Elec. Lett. vol. 27, No. 12, pp. 1038-1040, Jun.
Galina Kelner et al; High-Transconductance .beta.-SiC Buried-Gate JFET's; IEEE Transactions On Electron Devices, vol. 36, No. 6, Jun. 1989, pp. 1045-1049.
V. A. Dmitriev et al; High-temperature SiC-6H field-effect transistor with p-n gate; Sov. Tech. Phys. Lett. 14(2), Feb. 1988; pp. 127, 128.
Galina Kelner et al; .beta.-SiC MESFET's and Buried-Gate JFET's; IEEE Electron Device Letters, vol. EDL-8, No. 9, Sep. 1987, pp. 428-430.

Affiliated with

Also associated with

Rating

Junction field-effect transistor formed in silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Junction field-effect transistor formed in silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Junction field-effect transistor formed in silicon carbide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851480