Patent
1982-04-15
1987-01-20
Larkins, William D.
357 20, 357 41, H01L 2980, H01L 2704
Patent
active
046383441
ABSTRACT:
A new method of semiconductor operation has been conceived, developed and applied to produce a revolutionary new semiconductor design. The method is that of merging depletion regions for purposes of operation, isolation and control of channel current in a junction field-effect transistor. Using this method depletion regions are made to merge with suitable biasing in an intervening layer interposed between the gate and channel of a junction field-effect device and the interaction of the depletion regions is used for isolation and coupling to alter the associated depletion region in the channel of the junction field-effect device.
A number of embodiments are disclosed of the new junction field-effect transistor controlled by merged depletion regions. In each embodiment a channel of one conductivity type material is formed in a semiconductor body of opposite type material. A gate region of the same conductivity type material as the channel is placed near enough to the channel so that when the gate junction is reversed bias, the gate depletion region merges with the channel junction depletion region in the intervening layer. When the two depletion regions have merged, the gate controls the channel current in a manner similar to conventional devices.
Because the output and input and control connections are of the same conductivity type material, no metal contacts or interconnections are required. The lack of need for metal interconnects makes the device better suited to integrated circuits than any other device. In addition, the depletion regions surrounding the gate and channel isolate the gate and channel from other semiconductor regions of the same conductivity type and thus isolation regions are not required for the junction field-effect transistor controlled by mergers depletion regions. Consequently, use of the invention can result in the densest form of logic available today. Such devices hold the promise of improved performance in almost every semiconductor device application and can be used in almost every application where MOS and junction field-effect devices are now used.
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