Junction field effect transistor and method of manufacturing...

Details Junction field effect transistor and method of manufacturing... Junction field effect transistor and method of manufacturing...

2007-08-24

2009-11-10

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S270000, C257SE29312, C438S186000

Reexamination Certificate

active

07615809

ABSTRACT:
According to a junction FET of the present invention, the depth of a channel region is made shallow by selectively performing ion implantation and diffusion. Since the channel region forms a pn junction together with a p type semiconductor layer with relatively low impurity concentration, the improvement in the high frequency characteristic and the reduction in the amount of the leakage current because of the reduction in a junction capacitance can be achieved. Moreover, the depth of a gate region is also made shallow by ion implantation, and thus the reduction in noise because of the reduction in the internal resistance can be achieved.

REFERENCES:
patent: 4333224 (1982-06-01), Buchanan
patent: 5510632 (1996-04-01), Brown et al.
patent: 7417270 (2008-08-01), Hower et al.
patent: 2003/0168704 (2003-09-01), Harada et al.
patent: 1496587 (2004-05-01), None
patent: 6-69244 (1994-03-01), None
patent: 08-227900 (1996-09-01), None

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