Junction field effect transistor

Details Junction field effect transistor Junction field effect transistor

1987-05-29

1989-03-28

Edlow, Martin H.

357 41, H01L 2980

Patent

active

048168807

ABSTRACT:
A junction field effect semiconductor device is provided with p-type source and drain semiconductor regions separately formed in an n-type expitaxial layer grown on a substrate, a p-type channel layer, a highly doped n.sup.+ -type gate region surrounding the source and drain regions and the channel layer, and a highly doped n.sup.+ -type top gate layer formed on the channel layer. The channel layer is formed only in an area bounded between the source and drain regions, so that it is possible to make a drain current proportional to a channel width to length ratio.

REFERENCES:
Electronic Components and Applications, vol. 2, #3 May 1980 pp. 165-169.
Electronics Engineers' Handbook, Second Edition, Donald G. Fink, Editor-in-chief, McGraw-Hill Book Company, New York, 1982, pp. 8-28 Through 8-30.

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