Junction field effect transistor

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Details

357 20, 357 41, 357 55, H01L 2980

Patent

active

039757528

ABSTRACT:
A junction field effect transistor having a V-shaped upper gate, dividing said planar source and drain regions, formed by etching a (100) crystal oriented semiconductor material of one conductivity type and diffusing with material of opposite conductivity type.

REFERENCES:
patent: 3126505 (1964-03-01), Shockley
patent: 3293511 (1966-12-01), Gault
patent: 3878552 (1975-04-01), Rodgers

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