Junction field effect dynamic random access memory cell and...

Details Junction field effect dynamic random access memory cell and... Junction field effect dynamic random access memory cell and...

2007-05-17

2009-12-15

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Associative memories

Capacitor cell

C365S049100, C365S049110, C365S049170

Reexamination Certificate

active

07633784

ABSTRACT:
A semiconductor memory device including a dynamic random access memory (DRAM) cell and a ternary content addressable memory (TCAM) cell is disclosed. The DRAM cell may include a data storing portion and a data read portion. The data storing portion and data read portion comprising p-channel junction field effect transistors. The TCAM cell including an x-cell, y-cell, and comparator circuit. The x-cell, y-cell, and comparator circuits comprising p-channel JFETs.

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