Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific voltage responsive fault sensor
Patent
1987-11-17
1990-04-24
Jennings, Derek S.
Electricity: electrical systems and devices
Safety and protection of systems and devices
With specific voltage responsive fault sensor
361 56, 361111, 357 2313, H02H 320
Patent
active
049204459
ABSTRACT:
A junction-breakdown protection semiconductor device provides a well region which prevents the junction between a metal conductor and a diffused region from breakdown even under a high voltage or high current input. The junction-breakdown protection semiconductor device includes a metal conductor to which a high voltage is applied a semiconductor region of high impurity concentration having a conductivity type which is opposite to the conductivity type of the substrate is connected to the metal conductor through an opening in an insulating film. A second semiconductor region of the same conductivity type as the first semiconductor region is formed deeper in junction depth than the first semiconductor region under the opening in the insulator for ohmic connection on the surface of the first semiconductor region. This invention has the advantage of increased margin even with a alignment error of the ohmic connection in the fabricating process and thus provides an increased reliability of the semiconductor device.
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patent: 4546401 (1985-08-01), Suedberg
patent: 4694315 (1987-09-01), Suedberg
patent: 4716489 (1987-12-01), Imamura et al.
patent: 4723081 (1988-02-01), Akatsuka
patent: 4725915 (1988-02-01), Jwahashi et al.
patent: 4739378 (1988-04-01), Ferrari et al.
patent: 4739437 (1988-04-01), Morgan
patent: 4739438 (1988-04-01), Sato
Jennings Derek S.
Samsung Semiconductor and Telecommunications Co. Ltd.
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