Junction barrier schottky diode having high reverse blocking...

Details Junction barrier schottky diode having high reverse blocking... Junction barrier schottky diode having high reverse blocking...

2008-04-22

2010-11-09

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S471000, C257S472000, C257S473000, C257S474000, C257S475000, C257S477000, C257S478000, C257S479000, C257S480000, C257S481000, C257S482000, C257S483000, C257S484000, C257S485000, C257S486000, C257SE29338

Reexamination Certificate

active

07829970

ABSTRACT:
A junction barrier Schottky diode has an N-type well having surface and a first impurity concentration; a p-type anode region in the surface of the well, and having a second impurity concentration; and an N-type cathode region in the surface of the well and horizontally abutting the anode region, and having a third impurity concentration. A first N-type region vertically abuts the anode and cathode regions, and has a fourth impurity concentration. An ohmic contact is made to the anode and a Schottky contact is made to the cathode. The fourth impurity concentration is less than the first, second and third impurity concentrations.

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R. Perez, N. Mestres, M. Vellvehi, P. Godignon, J. Millan; Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC; Semiconductor Sci. Technol. 21 No. 5 (May 2006); p. 670-676 (examiner labeled pp. 1-14).
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