Josephson tunnel junction with polycrystalline silicon, germaniu

Details Josephson tunnel junction with polycrystalline silicon, germaniu Josephson tunnel junction with polycrystalline silicon, germaniu

1979-03-23

1980-09-02

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307306, 29599, H01L 3922

Patent

active

042209595

ABSTRACT:
A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunnelling barrier therebetween comprised of silicon, germanium or an alloy thereof preferably deposited on the lower superconductive electrodes by chemical vapor deposition. The barrier height of the junction is precisely controlled by precision doping of the semiconductor material.

REFERENCES:
patent: 3702956 (1972-11-01), Renard
Huang et al., Appl. Phys. Lett., vol. 25, No. 12, Dec. 15, 1974, pp. 753-756.
Laibowitz, I.B.M. Tech. Discl. Bull., vol. 17, No. 6, Nov. 1974, p. 1827.
Holdeman et al., Appl. Phys. Lett., vol. 28, No. 10, May 15, 1976, p. 632 et seq.
Palmer et al., Appl. Phys. Lett., vol. 25, No. 9, Nov. 1, 1974.

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