Josephson tunnel junction device with hydrogenated amorphous sil

Details Josephson tunnel junction device with hydrogenated amorphous sil Josephson tunnel junction device with hydrogenated amorphous sil

1978-05-08

1979-11-27

Edlow, Martin H.

357 6, 357 59, 357 2, 29599, H01L 3922

Patent

active

041763653

ABSTRACT:
A Josephson tunnel junction device having niobium superconductive electrodes with an amorphous hydrogenated semiconductor tunnelling barrier therebetween comprised of silicon or germanium or an alloy thereof supports an unusually high critical current density. Barrier dopants provide a further increase in the critical current density. The barrier is deposited by rf-sputtering in an atmosphere containing hydrogen.

REFERENCES:
patent: 3816173 (1974-06-01), Eldridge
patent: 3852795 (1974-12-01), Ames
patent: 3999203 (1976-12-01), Lahiri
Paul, et al., Solid State Comm., vol. 20, pp. 969-972, Pergamon Press, Great Britain.
Huang et al., IEEE Trans. on Magnetics, vol. MAG-11, No. 2, Mar. 1975.
Cardinne, et al., Revue de Physique Appliquee, vol. 9, Jan. 1974, p. 167.

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