Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-07-08
1998-10-13
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 32, 257 35, 257 36, H01L 3922
Patent
active
058215573
ABSTRACT:
A Josephson junction includes a substrate, a first superconducting layer, a second superconducting layer transversely overlaid on the first layer with an insulating layer interposed therebetween, the insulating layer is an oxide or a nitride of the superconducting material, and the insulating layer including a low oxygen- or nitrogen-concentrated area in contact with each of the first and second layers. A process for fabricating the Josephson junction includes the steps of preparing a substrate, forming a first superconducting layer, forming a second superconducting layer transversely on the first layer with an insulating layer interposed therebetween wherein the insulating layer is an oxide or nitride of the superconducting material, and injecting ion beams into the insulating layer so as to form low oxygen- or nitrogen-concentrated area linking the first and second layers.
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patent: 4751563 (1988-06-01), Laibowitz et al.
patent: 5100694 (1992-03-01), Hunt et al.
Nagamachi Shinji
Shinada Kei
Ueda Masahiro
Yoshii Mitsuyoshi
Guay John
Saadat Mahshid D.
Shimadzu Corporation
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