Josephson junction device of oxide superconductor and process fo

Details Josephson junction device of oxide superconductor and process fo Josephson junction device of oxide superconductor and process fo

1995-09-11

1997-04-29

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Superconductor next to superconductor

505702, 257 31, 257 32, 257 33, 257 34, H01L 3922

Patent

active

056248857

ABSTRACT:
A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.

REFERENCES:
patent: 4980341 (1990-12-01), Gehring
patent: 5053383 (1991-10-01), Short et al.
patent: 5157466 (1992-10-01), Char et al.
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Garrison et al., "Observation of Two In-Plane Epitaxial States in YBa.sub.2 -Cu.sub.3 -O.sub.7-.delta. Films on yttria-stabilized ZrO.sub.2," Applied Physics Letters, vol. 58, No. 19, pp. 2168-2170 (May 1991).
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