Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1993-06-01
1995-01-17
Thomas, Tom
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505817, G11C 1144, H01L 3924
Patent
active
053825667
ABSTRACT:
A Josephson junction device comprising a single crystalline substrate including principal surface, a layer of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second superconducting portions respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion between the first and the second superconducting portions, which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from those of the first and second superconducting portions, and grain boundaries between the first superconducting portion and the junction portion and between the second superconducting portion and the junction portion, which constitute one weak link of the Josephson junction.
REFERENCES:
patent: 5134117 (1992-07-01), DiIorio et al.
patent: 5157466 (1992-10-01), Char et al.
Friedl et al., "Transport Properties Of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.x Films At Step Edges," Appl. Phys. Lett., vol. 59:2751-2753, (1991).
Martens et al., "Tl-Ca-Ba-Cu-O Step-Edge Josephson Junctions", Appl. Phys. Lett. vol. 60:1141-1143, (1992).
Roas, "Patterning Of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.x Insulator Multilayers With A High-Temperature-Resistant Lift-Off Mask," Appl. Phys. Lett., vol. 59:2594-2596, (1991).
Itozaki Hideo
Matsuura Takashi
Tanaka Saburo
Sumitomo Electric Industries Ltd.
Thomas Tom
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