Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2008-03-26
2010-06-22
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257SE39006, C438S002000, C505S190000, C505S329000
Reexamination Certificate
active
07741634
ABSTRACT:
A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.
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Moodera Jagadeesh S.
Shim Heejae
Coleman W. David
Gauthier & Connors LLP
Massachusetts Institute of Technology
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