Josephson effect semiconductor device with channel layers of sem

Details Josephson effect semiconductor device with channel layers of sem Josephson effect semiconductor device with channel layers of sem

1992-03-02

1993-08-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 38, 257 39, 505 1, 505702, 505832, H01L 3922, H01B 1200, G11C 1144

Patent

active

052391876

ABSTRACT:
Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the distance between them should be smaller than the length of coherence, namely 10 to 1000 angstroms. According to the disclosure, the control channel between access electrodes is replaced by two channels perpendicular to the semiconductor layer, located between the two access electrodes and a layer of superconductive material placed between the substrate and the semiconductor layer. The disclosure can be applied to transistors, phototransistors and diodes with high switching speed.

REFERENCES:
patent: 4589001 (1986-05-01), Sakai et al.
patent: 4675711 (1987-06-01), Harder et al.
patent: 5071832 (1991-12-01), Iwamatsu
patent: 5126801 (1992-06-01), Nishino et al.
patent: 5138401 (1992-08-01), Yamazaki
Patent Abstract of Japan, vol. 012, No. 423 (E-680), Nov. 9, 1988, & JP-A-63 160 273, Jul. 4, 1988, S. Koji, et al., "High-Speed Semiconductor Device".

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