Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1993-01-27
1994-06-07
Powell, William
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
156643, 156649, 156655, 1566591, 156667, 505832, 505413, 437910, H01B 1200, H01L 3912, B44C 122
Patent
active
053189507
ABSTRACT:
This device or junction is essentially constituted by a substrate made from an electrically insulating material (2), a vertical wall (4) formed on the substrate and extending in a given direction (x), said wall being made from said insulating material, a superconducting material ribbon (8) in two separate parts (10, 12) located on either side of the wall and bearing on the latter, the ribbon being oriented in a direction perpendicular to the said direction, and two interconnection contacts (14, 16) respectively placed on the two portions of the ribbon.
REFERENCES:
patent: 5047390 (1991-09-01), Higashino et al.
patent: 5051396 (1991-09-01), Yamazaki
Japanese Journal of Applied Physics, vol. 24, No. 10, Oct. 1985, Tokyo, JP, pp. 1312-1315; Y. Okabe et al.: "Josephson Junctions with Short Semiconductor Links Separated by Oxidized Layer".
IEEE Electron Device Letters, vol. EDL-7, No. 5, May, 1986, New York, US, pp. 285-287; C. R. Musil et al.: "Focused Ion Beam Microsurgery for Electronics".
Transactions of the IEICE of Japan/Section E, vol. E70, No. 4, Apr. 1987, Tokyo, JP, pp. 389-391; M. Hiraki et al.: "Coplanar Silicon-Coupled Josephson Junctions with Recessed Electrode Structure".
Microelectronic Engineering, vol. 4, No. 3, 1986, Amsterdam, NL, pp. 163-179; H. Morimoto et al.: "Focused Ion Beam Lithography and Its Application to Submicron Devices".
Japanese Journal of Applied Physics, vol. 26, No. 8, Aug. 1987, pp. L1320-L1322; Toshikazu Nishino et al.: "Light Detection by Superconducting Weak Link Fabricated with High-Critical-Temperature Oxide-Superconductor Film".
American Institute of Physics, Applied Physics Letters, vol. 56, No. 7, Feb. 12, 1990, pp. 686-688; R. B. Laibowitz et al.: "All High T.sub.c Edge Junctions and SQUIDS".
American Institute of Physics, Applied Physics Letters, vol. 58, No. 7, Feb. 18, 1991, pp. 765-767; Mohammed E. Tidjani et al.: "Heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x -SrTiO.sub.3 -YBa.sub.2 Cu.sub.3 O.sub.7-x Trilayers Examined by Transmission Electron Microscopy".
American Institute of Physics, Applied Physics Letters, vol. 58, No. 7, Feb. 18, 1991, pp. 753-755; D. K. Chin et al.: "Novel All-High T.sub.c Epitaxial Josephson Junction".
American Institute of Physics, Applied Physics Letters, vol. 58, No. 6, Feb. 11, 1991, pp. 634-636; G. Koren et al.: "Properties of All YBa.sub.2 Cu.sub.3 O.sub.7 Josephson Edge Junctions Prepared by in situ Laser Ablation Deposition".
American Institute of Physics, Applied Physics Letters, vol. 56, No. 7, Feb. 12, 1990, pp. 683-685; K. Hirata et al.: "Tunneling Measurements on Superconductor/Insulator/Superconductor Junctions Using Single-Crystal YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films".
American Institute of Physics, Applied Physics Letters, vol. 58, No. 5, Feb. 4, 1991, pp. 543-545; K. P. Daly et al.: "Substrate step-edge YBa.sub.2 Cu.sub.3 O.sub.7 rf SQUIDS".
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Powell William
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