Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...
Reexamination Certificate
2007-08-23
2011-10-04
Silverman, Stanley (Department: 1736)
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Josephson junction, per se or josephson junction with only...
C505S234000, C505S329000, C505S702000, C257S032000, C257S033000, C257S035000
Reexamination Certificate
active
08032196
ABSTRACT:
A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oyas a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
REFERENCES:
patent: 2005/0231196 (2005-10-01), Tarutani et al.
Adachi et al, “Structure and Formation mechanism of Interface-Modified Layer in Ramp-Edge Josephson Devices with La-doped 123-Type superconducting electrodes,” IEEE Trans. on App. Superconductivity, 2003, V 13(6), 877-880.
Satoh, T., et al. “High Temperature Superconducting Edge-Type Josephson Junctions with Modified Interfaces”IEEE Transactions on Applied Superconductivity(1999) vol. 9, No. 2, pp. 3141-3144.
Soutome Y., et al. “HTS Surface-Modified Junctions with Integrated Ground-Planes for SFQ Circuits”IEICE Trans. Electron(2002) vol. E85-C, No. 3, pp. 759-763.
Wen, J. G., et al. “Atomic Structure and composition of the barrier in the modified interface high-TcJosephson junctions studied by transmission electron microscopy”Applied Physics Letters(1999) vol. 75, No. 16, pp. 2470-2472.
Adachi, S., et al. “Structure and Formation Mechanism of Interface-Modified Layer in Ramp-Edge Josephson Junctions with La-Doped 123-Type Superconducting Electrodes”IEEE Transactions on Applied Superconductivity(2003) vol. 13, No. 2, pp. 877-880.
Adachi Seiji
Tanabe Keiichi
Tsubone Koji
Wakana Hironori
Chugoku Electric Power Co., Inc.
International Superconductivity Technology Center, The Juridical
Ladas & Parry LLP
Silverman Stanley
Vijayakumar Kallambella
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