Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1991-09-20
1995-12-19
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 32, 505817, 505874, H01L 3912, H01L 3922
Patent
active
054770610
ABSTRACT:
A Josephson device comprises a first electrode layer of a superconducting material and containing Nb therein as a constituent element, an overlayer of a nitride of a refractory metal element provided on the first electrode layer, a barrier layer of an insulating compound that contains the metal element as a constituent element and acting as a barrier of a Josephson junction, the barrier layer being provided on the overlayer, and a second electrode layer of a superconducting material and containing Nb therein as a constituent element, the second electrode layer being provided on the barrier layer.
REFERENCES:
patent: 3392126 (1968-07-01), Bindari
Shoji et al., "Josephson Tunnel Junctions with No, Non Double-Layered Electrodes", Japanese Journal of Applied Physics, vol. 21, No. 4, Apr. 1982, pp. L192-L194.
Shoji et al. "New Fabrication Process for Josephson Tunnel Junctions with (Niobium Nitride, Niobium) Double-Layered Electrodes", Appl. Phys. Lett. vol. 41, No. 11, Dec. 1, 1982, pp. 1097-1099.
Asano et al. "Fabrication of Al-Nb Josephson Junctions Using Oxidized Zr Overlayers," Japanese Journal of Appl. Phys., vol. 28, No. 3, Mar. 1986, pp. 4261-4263.
Brunner et al. "Metal-Oxide-Metal Tunneling Junctions on Ta and Nb: Background Conductivity Resulting From Different Oxide Barriers", J. Appl. Phys. vol. 53, No. 3, Mar. 1982, pp. 1596-1601.
Laibowitz, R. B., et al, "Multilayer Josephson Memory Device" IBM Technical Disclosure Bulletin, vol. 15, No. 11, Apr. 1973.
Laibowitz et al., "Josephson Junctions with Nb/Al Composite Electrodes", Applied Physics Letters, vol. 20, No. 7, 1 Apr. 1972, New York, N.Y. pp. 254-256.
Hoko et al., "vertically integrated Josephson circuits with stacked Nb/AIO.sub.x /Nb junctions", International Electron Devices Meeting Technical Digest, 6 Dec. 1987, Washington, DC, pp. 385-388.
Kosaka et al., "Josephson address control unit 1C for a 4-bit Microcomputer Prototype", IEEE Transactions on Magnetics, vol. 25, No. 2, Mar. 1989, New York, N.Y., pp. 789-794.
Patent Abstracts of Japan, vol. 13, No. 18 (E-704) 17 Jan. 1989 & JP-A-63 224274 (Agency of Inductrial Science & Technology).
Crane Sara W.
Fujitsu Limited
Tang Alice W.
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