Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1991-11-27
1994-05-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 35, 505817, 505832, 505162, H01L 3922, H01B 1200, C23C 1400, G11C 1144
Patent
active
053130740
ABSTRACT:
In a Josephson device which can be employed as a sensor including superconductor for measuring an extremely weak magnetic field, a Josephson junction consisting of superconducting material is formed, and a covering layer consisting of ordinary conducting metal or semiconductor is formed on the Josephson junction. This enables the Josephson junction to be isolated from the oxidized atmosphere. Further, the covering layer is not to present any deterioration such as cracks even upon being subjected to a thermal hysteresis from very low temperature to ordinary temperature.
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Fujita Satoshi
Tamura Itsuro
Wada Masao
Hille Rolf
Osaka Gas Company Limited
Saadat Mahshid
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