Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...
Patent
1991-10-10
1994-12-27
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Josephson junction, per se or josephson junction with only...
505702, 505780, 505782, 505783, 505846, 505873, 257 33, 257 31, H01L 3922, H01L 3900
Patent
active
053766245
ABSTRACT:
A Josephson break junction device suitable for highly sensitive electronic detecting systems. A superconductor film such as YBa.sub.2 Al.sub.3 O.sub.7 is deposited on a substrate such as a single-crystal MgO. The film is fractured across a narrow strip by at least one indentation in the substrate juxtaposed from the strip to form a break junction. A transducer is affixed to the substrate for applying a bending movement to the substrate to regulate the distance across the gap formed at the fracture to produce a Josephson turned junction effect. Alternatively, or in addition to the transducer, a bridge of a nobel metal is applied across the gap to produce a weak-link junction.
REFERENCES:
patent: 3537305 (1970-11-01), Rindner et al.
patent: 4430790 (1984-02-01), Ohta
patent: 4591787 (1986-05-01), Hoenig
J. Moreland, et al., "Electron Tunneling Experiments Using Nb-Sn `Break` ctions", J. Appl. Phys. 58(10), 15 Nov. 1985, pp. 3888-3895.
J. Moreland, et al., "Josephson Effect Above 77K in a YBaCuO Break Junction", Appl. Phys. Lett. 51(7), 17 Aug. 1987, pp. 540-541.
J. Moreland, "Break Junction Measurement of the Tunneling Gap of a Thallium-Based High Temperature Superconductor Crystal", Appl. Phys. Lett. 55(14), 2 Oct. 1989, pp. 1463-1465.
Perez Ignacio M.
Scott William R.
Bechtel James B.
James Andrew J.
Tang Alice W.
The United States of America as represented by the Secretary of
Tura James V.
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