Joining of SiC parts by polishing and hipping

Details Joining of SiC parts by polishing and hipping Joining of SiC parts by polishing and hipping

1988-09-27

1990-05-15

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 67, 264332, 428698, C04B 3556

Patent

active

049256084

ABSTRACT:
A method of joining two pre-sintered pieces of silicon carbide is disclosed. It entails polishing the surfaces to be joined to a mirror-finish, fitting the polished surfaces together to form a composite structure, and then subjecting the composite structure to hot isostatic pressing under conditions which are sufficient to form a joint which is essentially indistinguishable from the original silicon carbide pieces.

REFERENCES:
patent: 4487644 (1984-12-01), Gupta et al.
patent: 4514240 (1985-04-01), Heraud
patent: 4526649 (1985-07-01), Gupta et al.
patent: 4579703 (1986-04-01), Adlerborn
Feasibility Study of the Welding of SiC--Thomas J. Moore, NASA--Lewis Res. Ctr., Cleve., Ohio Comm. of the Am. Ceramic Society C-151-153 Jun./1985.
Welding and Brazing Silicon Carbide, Thomas J. Moore, Lewis Research Center Cleve., Ohio, MASA Tech Briefs, Jul./Aug. 1986, pp. 118-119.

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