Joining method for high-purity ceramic parts

Details Joining method for high-purity ceramic parts Joining method for high-purity ceramic parts

2006-06-06

2006-06-06

Cozart, Jermie E. (Department: 3726)

Metal working

Method of mechanical manufacture

Assembling or joining

C029S527200, C428S446000, C427S249150, C427S255180

Reexamination Certificate

active

07055236

ABSTRACT:
A method for joining high-purity ceramic parts useful as parts for semi-conductor production apparatus, in particular, ceramic jigs used in the production of semi-conductors. Two related joining methods are described. First, high purity ceramic parts made of silicon carbide are placed in contact with each other and a layer of silicon carbide is coated around the two SiC pieces by chemical vapor deposition (CVD). This vapor deposited coating serves to bind the parts tightly together. In a second procedure, the ceramic elements are placed next to each other at a spaced distance, preferably from 10–1,000 um. The space between the two ceramic elements is filled with SiC using a vapor deposition (CVD) technique. The resultant structure is such that the outer layers of the ceramic elements are continuously integrated with each other via SiC the ceramic material vapor deposited in the space. Combinations of the first and second procedures are taught.

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