Joined wafer, fabrication method thereof, and fabrication...

Details Joined wafer, fabrication method thereof, and fabrication... Joined wafer, fabrication method thereof, and fabrication...

2009-07-01

2011-11-01

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C156S273300, C257SE21122, C257SE21567, C438S068000, C438S456000, C438S460000, C438S462000

Reexamination Certificate

active

08048768

ABSTRACT:
A method of fabricating a joined wafer has an exposure process which comprises a device formed-area exposure process of exposing by a stepper such that parts of the photosensitive adhesive layer formed over a surface of the transparent wafer or the device formed wafer are removed, the parts corresponding to the device formed areas when the transparent wafer and the device formed wafer are stuck together; and a wafer periphery exposure process of exposing such that a portion of the photosensitive adhesive layer over the periphery of the transparent wafer is left.

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patent: 2007/0080418 (2007-04-01), Ryu
patent: 2008/0083980 (2008-04-01), Yang et al.
patent: 2008/0191335 (2008-08-01), Yang et al.
patent: 2008/0211075 (2008-09-01), Yang et al.
patent: 2004-207461 (2004-07-01), None
patent: 2007-282137 (2007-10-01), None

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