Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2004-07-09
2010-10-26
Vu, David (Department: 2818)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S523000, C361S534000
Reexamination Certificate
active
07819928
ABSTRACT:
The present invention provides a capacitor production method where an electric conductor having a dielectric layer formed thereon is used as one electrode and a semiconductor layer is formed by energization to be the other electrode, comprising the energization performed through a constant current diode, and also provides a jig for producing capacitors, which is used for forming semiconductor layers by energization on two or more electric conductors each having formed on the surface thereof a dielectric layer, the jig comprising two or more current ejection-type constant current sources in accordance with the number of electric conductors, which current sources each has an output electrically connected in series with a connection terminal for the electric conductor. Use of the jig of the present invention, enables production of capacitors including semiconductor as one electrode with a small variation in the capacitance.
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Japanese Office Action dated Sep. 15, 2009 issued in corresponding Japanese Patent Application No. JP 2004-202561.
Naito Kazumi
Tamura Katutoshi
Showa Denko K.K.
Sughrue & Mion, PLLC
Taylor Earl N
Vu David
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