Oscillators – Solid state active element oscillator – Transistors
Patent
1980-05-27
1985-11-12
Westin, Edward P.
Oscillators
Solid state active element oscillator
Transistors
331117FE, H03B 512, H03B 536
Patent
active
045531102
ABSTRACT:
A high frequency oscillator circuit is provided using a low cost junction type field effect transistor (T.sub.1) with a tuned circuit connected to its gate. The frequency of operation is determined by the tuned circuit and the capacitance reflected from the source to the gate. The transistor is matched to the frequency of operation so that this frequency falls within the roll-off portion of the transistor's transconductance verses frequency curve, preferably somewhat above the 3 db point in frequency. Phase shifting necessary to sustain oscillation occurs due to the operation of the transistor in the roll-off portion of the curve and the addition of a phase shifting network (R.sub.1, C.sub.1) at the source. The resulting oscillator is small, stable, linear and inexpensive.
REFERENCES:
patent: 3477039 (1969-11-01), Chan
Garner, Jr., "Meet Mr. FET", Popular Electronics, Feb. 1967, pp. 47-53, 94.
Manning John R.
Sandler Ronald F.
The United States of America as represented by the Administrator
Tresansky John O.
Westin Edward P.
LandOfFree
JFET Reflection oscillator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with JFET Reflection oscillator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and JFET Reflection oscillator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1882416