JFET optical sensor with capacitively charged buried floating ga

Details JFET optical sensor with capacitively charged buried floating ga JFET optical sensor with capacitively charged buried floating ga

1974-06-12

1976-03-30

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

250211J, 313 94, 355 3R, 357 22, 357 30, 357 31, 357 59, H01L 3100

Patent

active

039477070

ABSTRACT:
An electronic solid state device comprising a layer in which the electrical conductivity is controlled by a plurality of isolated discrete regions distributed within the bulk of the layer and forming potential barriers with semi conductor material of the layer surrounding the discrete regions. Electrical charge is stored in the layer by the discrete regions and the charging is obtained by the application of a potential pulse across the discrete regions. In a preferred operational mode the charging potential is applied such that current conduction paths in the layer are blocked by the depletion regions associated with the potential barrier for applied interrogation potentials across the regions of substantially smaller magnitude than the charging pulse. The device may consist of an imaging device having high charges gain and particular embodiments described consist of an image intensifier, an imaging active photocathode and a target plate of a vidicon camera tube.

REFERENCES:
patent: 2968750 (1961-01-01), Noyce
patent: 3044909 (1962-07-01), Shockley
patent: 3366802 (1968-01-01), Hilbiber
patent: 3453507 (1969-07-01), Archer
patent: 3543032 (1970-11-01), Kazan
patent: 3609441 (1971-09-01), Barrekette
patent: 3615854 (1971-10-01), Aten
patent: 3620832 (1971-11-01), TeVelde
patent: 3721839 (1973-03-01), Shannon
patent: 3764325 (1973-10-01), TeVelde
patent: 3773567 (1973-11-01), Gillespie

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